Multi-level vertical III-V nanowire gate-all-around ferroelectric FETs for in-memory computing
Hafnia-based ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory and neuromorphic computing due to their fast switching, low power consumption, and CMOS compatibility [1]–[3]. IIIV materials, such as InAs, offer superior electron transport properties [4], [5], and high remnant polarization at low annealing temperatures when integrated with hafnia-based
