Understanding and Optimization of III-V nanowire growth in Aerotaxy
III-V semiconductor nanowires are high aspect ratio nanostructures with superior properties that can potentially enhance the functionality of next-generation opto-electronic devices. At present, the most reliable method for fabricating III-V semiconductor nanowires is the particle-assisted vapor-liquid-solid growth using a substrate-based growth process. However, a substrate-based process limits t
