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New neurons, originating from the subventricular zone, are continuously integrating into neuronal circuitry in the olfactory bulb (OB). Using a transgenic sensor mouse, we found that adult-born OB interneurons express microRNA-125 (miR-125), whereas the pre-existing developmentally generated OB interneurons represent a unique population of cells in the adult brain, without miR-125 activity. Stable
In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measuremen
The objective of the present study was to investigate whether ego-dystonic and ego-syntonic suicidal ideation occurred at different frequencies during antidepressant therapy. A blind evaluation has been performed on records of 100 suicides with a primary severe depression and 100 matched controls, admitted to the Department of Psychiatry, Lund, Sweden. Ego-dystonic suicidal ideation was more commo
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts
A thorough understanding of how proteins induce nanoparticle (NP) aggregation is crucial when designing in vitro and in vivo assays and interpreting experimental results. This knowledge is also crucial when developing nano-applications and formulation for drug delivery systems. In this study, we found that extraction of immunoglobulin G (IgG) from cow serum results in lower polystyrene NPs aggrega
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirel
BACKGROUND: Few studies investigate predictors of intentional self-injury over time in non-clinical samples. By using longitudinal data from the whole population of the county of Scania, Sweden, aged 18 years and over (N = 936 449), we aim to identify risk factors for non-fatal diagnosed intentional self-injury. Groups at risk of repeat episodes of self-injury will be identified. METHODS: Informat
To analyse 5-year cost-effectiveness of early versus optional delayed acute anterior cruciate ligament (ACL) reconstruction.
We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is m
The aim of this study was to investigate the microvascular responses in the skin, to local heat, iontophoretically administered acetylcholine and to sodium nitroprusside in relation to cardiovascular damage in patients with systemic lupus erythematosus (SLE) and matched controls. We also wanted to examine if the ongoing medication in SLE patients influenced this vascular response. We investigated
Repeated injury of the airway epithelium caused by hyperpnoea of poorly conditioned air has been proposed as a key factor in the pathogenesis of exercise-induced bronchoconstriction (EIB) in athletes. In animals, the short-acting beta(2)-agonist terbutaline has been shown to reduce dry airflow-induced bronchoconstriction and the associated shedding of airway epithelial cells. Our aim was to test t
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. Th
We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 c
III-V Nanowires (NWs) grown with metal-organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. In
Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, w
Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from
We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microsc
Objective: To estimate the incidence of hospitalization for paediatric obstructive sleep apnoea syndrome (OSAS) or sleep-disordered breathing (SDB) caused by adenotonsillar or tonsillar hypertrophy without infection in children with a parent affected by OSAS. Patients and methods: Using the MigMed database at Lund University, hospital data on all children aged 0-18 years in Sweden between 1997 and
Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron m
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowi
