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III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are ex

InGaAs nanowires is one of the promising material systems of replacing silicon in future CMOS transistors, due to its high electron mobility in combination with the excellent electrostatic control from the tri-gate geometry. In this article, we report on gated Hall measurements on single and multiple In0.85Ga0.15As nanowires, selectively grown in a Hall bridge geometry with nanowire widths down to

III-V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanow

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown b

Core–shell nanowires offer great potential to enhance the efficiency of light-emitting diodes (LEDs) and expand the attainable wavelength range of LEDs over the whole visible spectrum. Additionally, nanowire (NW) LEDs can offer both improved light extraction and emission enhancement if the diameter of the wires is not larger than half the emission wavelength (λ/2). However, AlGaInP nanowire LEDs h

Psykossjukdomar, framför allt schizofreni, anses vara en av de mest krävande sjukdomar för anhö-riga, dels i termer av daglig assistans, dels dess negativa påverkan på hälsa och livskvalitet. Det är idag ovanligt att informell vård inkluderas i hälsoekonomiska analyser. I detta kapitel granskar vi litteraturen på detta område och har funnit sex kostnadsstudier i en europeisk kontext men inte någon

Mechanical forces exists in many cellular processes, including cell proliferation, migration, rearrangement and differentiation. The transformation of cancer cells from normal cells, cancer metastasis and cell rearrangement during morphogenesis all involve changes in cellular mechanical forces. Although there are some studies about normal cell and cancer cell force measurements, a direct compariso

The ability to apply highly controlled electric fields within microfluidic devices is valuable as a basis for preparative and analytical processes. A challenge encountered in the context of such approaches in conductive media, including aqueous buffers, is the generation of electrolysis products at the electrode/liquid interface which can lead to contamination, perturb fluid flows and generally in

We use crystal-phase tuning during epitaxial growth of InAs nanowires to create quantum dots with very strong confinement. A set of gate electrodes are used to reproducibly split the quantum dots into even smaller pairs for which we can control the populations down to the last electron. The double quantum dots, which are parallel-coupled to source and drain, show clear and stable odd-even level pa

We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. T

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 - 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 - 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mSm and I ON = 160A/m (at I OFF = 100 nA/m and V DD =

Background Depression is a common disorder in both men and women, and the recurrence rate is high. The aim of this study was to identify risk factors for recurrence in depression in the Lundby Study. Methods The Lundby Study is a community-based longitudinal study with focus on mental health. The study started in 1947 and three follow-ups have been carried out since, the last one in 1997. The po

Objective: There is a decreased risk of breast cancer in systemic lupus erythematosus (SLE) versus the general population; little is known regarding the receptor status of breast cancers in SLE, or treatment. Methods: Breast cancer cases occurring after SLE diagnosis were ascertained through linkage with tumor registries. We determined breast cancer positivity for estrogen receptors (ER), progeste

We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double q

Background--Long-term disease progression after myocardial infarction (MI) is inadequately understood. We evaluated the pattern and angiographic properties (culprit lesion [CL]/non-CL [NCL]) of recurrent MI (re-MI) in a large real-world patient population. Methods and Results--Our observational study used prospectively collected data in 108 615 patients with first-occurrence MI enrolled in the SWE

Due to their unique physical and material properties, III-Sb nanowires are considered good candidates for future devices, and test beds for understanding fundamental physics. Synthesizing these nanowires however is associated with certain challenging aspects, which are generally not present for other III-V nanowires, demanding the need for in depth investigations. For instance, growing Au-seeded I

Whole-genome sequencing methods in familial cancer are useful to unravel rare clinically important cancer predisposing variants. Here, we present improvements in our pedigree-based familial cancer variant prioritization pipeline referred as FCVPPv2, including 12 tools for evaluating deleteriousness and 5 intolerance scores for missense variants. This pipeline is also capable of assessing non-codin