Symmetric relaxation around interstitial 3d impurities in silicon
EPR studies suggest that most transition atom impurities in silicon occupy the tetrahedral interstitial (Ti) site, preserving the Td symmetry of the host (1). The authors give, within the local-density approximation, a unified description of the electronic structure and `breathing-mode' relaxation of tetrahedral interstitial Cr, Mn, Fe, Co and Ni impurities in bulk silicon.(7 refs)
